ISC provides a wide variety of BJTs, including NPN, PNP, Darlington, with voltages ranging from 20V to 1600V, currents from 0.1A to 60A. We also provide metallic packaging TO-3 series products. ISC＊s products have robust performance with minimal lot-to-lot variations.
ISC＊s new products, high-frequency high-speed low-saturation voltage transistors in TO-251, TO-252, and TO-263 packages, are unique in Chinese production, and can reach frequencies above 300MHz, and tf <100ns.
ISC provides MOSFETs under U.S., European, and Japanese categories, with robust performance and minimal lot-to-lot variations. We also produce metallic packaging TO-3 MOSFETs.
Maximum Current 600A, Highest Voltage 1500V.
ISC provides thyristors under European and Japanese categories. We have a wide variety of packages. Maximum Current 80A, Highest Voltage 1600V.
Our RF transistors are low-noise, high-gain, with fT reaching 10GHz. We provide surface mounting small signal series and TO-220 power series.
Flat plate version
Flat plate type ceramic package; Diffusion process; Double sided cooling. Maximum Current 5000A, Highest Voltage 5000V.
Metal stud structure; IF(AV): 5 to 500A, VRRM: 100 to 5000V; Capacity of supporting high surge current.
We offer 78xx and 79xx series, with 1.5A and 1.0A. Packages include TO-220, TO-263, TO-251, TO252, and especially TO-3 metallic, such as 7805K and LM 317K. These products have robust performance with minimal lot-to-lot variations.